Datasheet > IRFZ44ND

IRFZ44ND

更新时间： 2024-11-20 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	158K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 49A I(D) \| CHIP

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中文翻译

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数据手册

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IRFZ44ND 数据手册

IRFZ44ND

N-Channel Enhancement-Mode MOSFET Die

55V R

20mΩ I 49A

DS(ON)

Chip Geometry

Source

Gate

Physical Characteristics

Features

• Die size : 4040 X 1890µm (159 X 74.4 mils)

• Dynamic dv/dt Rating

• Metalization:

Top: Al/Si/Cu

Back: Ti/Ni/Ag

• Repetitive Avalanche Rated

• 175°C Operating Temperature

• Ease of Paralleling

• Metal Thickness:

Top: 3.0µm

Back: 1.4µm

• Fast Switching for High Efficiency

• Simple Drive Requirements

• Die thickness: 9 - 13 mils

• Bonding Area:

Source: Full metalized surface of source region

Gate: 407 x 506µm

• Recommended Wire Bonding:

Source: 12 mil Al wire (2 wires preferred)

Gate: 5 mil Al wire

Note: More source wires can further improve performance

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

Continuous Drain Current

V_GS=10V

T_C= 25°C

T_C= 100°C

I_D

160

Pulsed Drain Current⁽¹⁾

I_DM

P_D

Maximum Power Dissipation

Single Pulse Avalanche Energy⁽²⁾

Avalanche Current⁽¹⁾

T_C= 25°C

E_AS

210

I_AR

Repetitive Avalanche Energy⁽¹⁾

E_AR

°C

Operating Junction and Storage Temperature Range

Junction-to-Case Thermal Resistance

T_J, T_stg

R_θJC

R_θJA

–55 to 175

1.6

°C/W

Junction-to-Ambient Thermal Resistance

Notes: (1) Repetitive rating; pulse width limited by max. junction temperature

(2) V_DD= 25V, starting T_J= 25°C, L = 470µH, R_G= 25Ω, I_AS= 25A

(3) Maximum ratings are based on die packaged in TO-220. Actual ratings

may vary depending on actual assembly method used.

5/8/01

12 3 4 5

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