IRFZ44NL

更新时间： 2024-11-24 22:08:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管脉冲
页数	文件大小	规格书
10页	154K
描述
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFZ44NL 数据手册

PD - 94153

IRFZ44NS

IRFZ44NL

l Advanced Process Technology

l Surface Mount (IRFZ44NS)

l Low-profilethrough-hole(IRFZ44NL)

l 175°C Operating Temperature

l Fast Switching

HEXFET^®Power MOSFET

V_DSS= 55V

l Fully Avalanche Rated

Description

R_DS(on)= 0.0175Ω

AdvancedHEXFET^®PowerMOSFETsfromInternational

Rectifierutilizeadvancedprocessingtechniquestoachieve

extremelylowon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

devicedesignthatHEXFETpowerMOSFETsarewellknown

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

I_D= 49A

The D²Pak is a surface mount power package capable of

accommodatingdiesizesuptoHEX-4.Itprovidesthehighest

power capability and the lowest possible on-resistance in

anyexistingsurfacemountpackage.TheD²Pakissuitable

for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a

typicalsurfacemountapplication.

T O -262

Pak

Thethrough-holeversion(IRFZ44NL)isavailableforlow-

profileapplications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

160

3.8

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

0.63

± 20

W/°C

V_GS

I_AR

Gate-to-Source Voltage

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

9.4

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.5

Units

R_θJC

R_θJA

Junction-to-Ambient

–––

°C/W

www.irf.com

03/13/01

12 3 4 5 6 7...10

中文翻译

下载PDF

IRFZ44NL 替代型号

型号	品牌	替代类型	描述	数据表
IRFZ44NLPBF	INFINEON	类似代替	HEXFET㈢Power MOSFET
AUIRFZ44NL	INFINEON	功能相似	AUTOMOTIVE GRADE

与IRFZ44NL相关器件

型号	品牌	获取价格	描述	数据表
IRFZ44NLPBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRFZ44NPBF	INFINEON	获取价格	HEXFET-R Power MOSFET
IRFZ44NS	NXP	获取价格	N-channel enhancement mode TrenchMOS transistor
IRFZ44NS	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)
IRFZ44NS	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
IRFZ44NS/T3	NXP	获取价格	TRANSISTOR 49 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
IRFZ44NS31A	VISHAY	获取价格	Power Field-Effect Transistor, 49A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ44NS31B	VISHAY	获取价格	Power Field-Effect Transistor, 49A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ44NSPBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRFZ44NSTRL	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 49A I(D) \| TO-263AB

与IRFZ44NL相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFZ44NL

IRFZ44NL 数据手册

IRFZ44NL 替代型号

与IRFZ44NL相关器件

与IRFZ44NL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFZ44NL

IRFZ44NL 数据手册

IRFZ44NL 替代型号

与IRFZ44NL相关器件

与IRFZ44NL相关文章

您还可以找

您在本页遇到什么问题？