是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 15 weeks |
风险等级: | 5.01 | 其他特性: | AVALANCHE RATED, HIGH RELIABILITY |
雪崩能效等级(Eas): | 220 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 48 A | 最大漏源导通电阻: | 0.023 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 192 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFZ44ESTRLPBF | INFINEON |
类似代替 |
暂无描述 | |
IRFZ44ESPBF | INFINEON |
类似代替 |
HEXFET㈢ Power MOSFET | |
IRFZ44ES | INFINEON |
类似代替 |
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFZ44F | INFINEON |
获取价格 |
Power Field-Effect Transistor, 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IRFZ44FX | INFINEON |
获取价格 |
Power Field-Effect Transistor, 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IRFZ44FXPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IRFZ44L | VISHAY |
获取价格 |
Power MOSFET | |
IRFZ44L | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRFZ44LPBF | VISHAY |
获取价格 |
Power MOSFET | |
IRFZ44N | ISC |
获取价格 |
isc N-Channel MOSFET Transistor | |
IRFZ44N | SUNTAC |
获取价格 |
N-CHANNEL Power MOSFET | |
IRFZ44N | TRSYS |
获取价格 |
Power MOSFET | |
IRFZ44N | FREESCALE |
获取价格 |
HEXFET® Power MOSFET |