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IRFZ44ESTRRPBF PDF预览

IRFZ44ESTRRPBF

更新时间: 2024-11-21 20:45:39
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 239K
描述
Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

IRFZ44ESTRRPBF 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:5.01其他特性:AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级(Eas):220 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):48 A最大漏源导通电阻:0.023 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):192 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFZ44ESTRRPBF 数据手册

 浏览型号IRFZ44ESTRRPBF的Datasheet PDF文件第2页浏览型号IRFZ44ESTRRPBF的Datasheet PDF文件第3页浏览型号IRFZ44ESTRRPBF的Datasheet PDF文件第4页浏览型号IRFZ44ESTRRPBF的Datasheet PDF文件第5页浏览型号IRFZ44ESTRRPBF的Datasheet PDF文件第6页浏览型号IRFZ44ESTRRPBF的Datasheet PDF文件第7页 
PD - 95572  
IRFZ44ESPbF  
IRFZ44ELPbF  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Surface Mount (IRFZ44ES)  
l Low-profile through-hole (IRFZ44EL)  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 60V  
R
DS(on) = 0.023Ω  
G
l Fully Avalanche Rated  
l Lead-Free  
ID = 48A  
S
Description  
Fifth Generation HEXFETs from International Rectifier utilize advanced  
processing techniques to achieve extremely low on-resistance per silicon area.  
This benefit, combined with the fast switching speed and ruggedized device  
design that HEXFET Power MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use in a wide variety of  
applications.  
The D2Pak is a surface mount power package capable of accommodating die  
sizes up to HEX-4. It provides the highest power capability and the lowest  
possible on-resistance in any existing surface mount package. The D2Pak is  
suitable for high current applications because of its low internal connection  
resistance and can dissipate up to 2.0W in a typical surface mount application.  
The through-hole version (IRFZ44EL) is available for low-profile applications.  
2
TO-262  
D
Pak  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10Vꢀ  
Continuous Drain Current, VGS @ 10Vꢀ  
Pulsed Drain Current ꢀ  
48  
34  
A
192  
110  
0.71  
± 20  
220  
29  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
11  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
1.4  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
www.irf.com  
1
07/19/04  

IRFZ44ESTRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFZ44ESTRLPBF INFINEON

类似代替

暂无描述
IRFZ44ESPBF INFINEON

类似代替

HEXFET㈢ Power MOSFET
IRFZ44ES INFINEON

类似代替

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

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