IRFZ44L

更新时间： 2024-11-08 22:08:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲
页数	文件大小	规格书
10页	328K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFZ44L 数据手册

PD - 9.893A

IRFZ44S/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRFZ44S)

l Low-profile through-hole (IRFZ44L)

l 175°C Operating Temperature

l Fast Switching

V_DSS= 60V

R_DS(on)= 0.028Ω

I_D= 50A

Description

Third Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ44L) is available for low-

profile applications.

Pa k

T O -2 6 2

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

200

3.7

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

150

1.0

Linear Derating Factor

W/°C

V_GS

E_AS

dv/dt

T_J

Gate-to-Source Voltage

± 20

100

4.5

Single Pulse Avalanche Energyꢀ

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

-55 to + 175

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.0

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

8/25/97

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRFZ44L相关器件

型号	品牌	获取价格	描述	数据表
IRFZ44LPBF	VISHAY	获取价格	Power MOSFET
IRFZ44N	ISC	获取价格	isc N-Channel MOSFET Transistor
IRFZ44N	SUNTAC	获取价格	N-CHANNEL Power MOSFET
IRFZ44N	TRSYS	获取价格	Power MOSFET
IRFZ44N	FREESCALE	获取价格	HEXFETÂ® Power MOSFET
IRFZ44N	TGS	获取价格	N-Channel Power MOSFET
IRFZ44N	NXP	获取价格	N-channel enhancement mode TrenchMOS transistor
IRFZ44N	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)
IRFZ44N	NJSEMI	获取价格	Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220AB
IRFZ44N	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时