Datasheet > IRFZ44N

IRFZ44N

更新时间： 2024-05-23 22:22:38

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	862K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:50A;Vgs(th)(V):±20;漏源导通电阻:17mΩ@10V

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IRFZ44N 数据手册

UMW

IRFZ44N

60V N-Channel MOSFET

General Description

The IRFZ44NS/IRFZ44N uses advanced trench technology

and design to provide excellent RDS(ON) with low gate cha rg e.

It ca n be used in a wide variety of applications.

N-Channel MOSFET

Product Summary

60V

V_DS

I_D(at V_GS=-10V)

50A

=10V)

< 12mΩ

< 16mΩ

R_DS(ON)(at V_GS

TO-362

=4.5V)

R_DS(ON)(at V_GS

Absolute Maximum Ratings(TA=25℃unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

TC=25℃

Drain Current-Continuous^Note3

I_D

TC=100℃

Drain Current-Pulsed^Note1

I_DM

E_AS

P_D

200

Avalanche Energy^Note4

℃

Maximum Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

TC=25℃

105

T_STG

T_J

-55 to +150

℃

Thermal Resistance

Parameter

Symbol

Min.

Typ.

Max

Unit

Thermal Resistance,Junction-to-Case

1.4

℃/W

θJC

www.umw-ic.com

1 !"#$%&'(

12 3 4 5 6 7 8

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