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IRFZ44N PDF预览

IRFZ44N

更新时间: 2024-11-21 05:39:31
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页数 文件大小 规格书
2页 112K
描述
isc N-Channel MOSFET Transistor

IRFZ44N 数据手册

 浏览型号IRFZ44N的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc N-Channel MOSFET Transistor  
IRFZ44N  
FEATURES  
·Drain Current –ID=49A@ TC=25  
·Drain Source Voltage-  
: VDSS= 55V(Min)  
·Static Drain-Source On-Resistance  
: RDS(on) = 0.032Ω(Max)  
·Fast Switching  
DESCRIPTION  
·Designed for low voltage, high speed switching applications in  
power supplies, converters and power motor controls, these  
devices are particularly well suited for bridge circuits where  
diode speed and commutating safe operating areas are critical  
and offer additional safety margin against unexpected voltage  
transients.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VDSS  
VGS  
ID  
PARAMETER  
VALUE  
55  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage-Continuous  
Drain Current-Continuous  
±20  
49  
V
A
IDM  
160  
A
Drain Current-Single Pluse (tp10μs)  
Total Dissipation @TC=25℃  
PD  
94  
W
Max. Operating Junction Temperature  
Storage Temperature  
175  
TJ  
-55~175  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
1.5  
UNIT  
/W  
/W  
Rth j-c  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Rth j-a  
62  
isc Websitewww.iscsemi.cn  

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