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IRFZ44ESTRLPBF PDF预览

IRFZ44ESTRLPBF

更新时间: 2024-11-21 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 101K
描述
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IRFZ44ESTRLPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.61其他特性:AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级(Eas):220 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):48 A最大漏源导通电阻:0.023 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):192 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFZ44ESTRLPBF 数据手册

 浏览型号IRFZ44ESTRLPBF的Datasheet PDF文件第2页浏览型号IRFZ44ESTRLPBF的Datasheet PDF文件第3页浏览型号IRFZ44ESTRLPBF的Datasheet PDF文件第4页浏览型号IRFZ44ESTRLPBF的Datasheet PDF文件第5页浏览型号IRFZ44ESTRLPBF的Datasheet PDF文件第6页浏览型号IRFZ44ESTRLPBF的Datasheet PDF文件第7页 
PD - 94053  
IRFZ44N  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
D
VDSS = 55V  
l 175°C Operating Temperature  
l Fast Switching  
RDS(on) = 17.5mΩ  
G
l Fully Avalanche Rated  
ID = 49A  
S
Description  
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifierutilizeadvancedprocessingtechniquestoachieve  
extremelylowon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 watts. The low thermal  
resistance and low package cost of the TO-220 contribute  
to its wide acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
49  
35  
160  
A
PD @TC = 25°C  
Power Dissipation  
94  
W
W/°C  
V
Linear Derating Factor  
0.63  
VGS  
IAR  
Gate-to-Source Voltage  
± 20  
Avalanche Current  
25  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
9.4  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
1.5  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
www.irf.com  
1
01/03/01  

IRFZ44ESTRLPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFZ44ESTRRPBF INFINEON

类似代替

Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44ESPBF INFINEON

类似代替

HEXFET㈢ Power MOSFET
IRFZ44ES INFINEON

类似代替

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

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