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IRFZ44ES PDF预览

IRFZ44ES

更新时间: 2024-11-05 22:08:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 164K
描述
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

IRFZ44ES 数据手册

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PD - 9.1714  
IRFZ44ES/L  
PRELIMINARY  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Surface Mount (IRFZ44ES)  
D
VDSS = 60V  
l Low-profile through-hole (IRFZ44EL)  
l 175°C Operating Temperature  
l Fast Switching  
RDS(on) = 0.023Ω  
G
l Fully Avalanche Rated  
ID = 48A  
S
Description  
Fifth Generation HEXFETs from International Rectifier utilize advanced  
processing techniques to achieve extremely low on-resistance per silicon area.  
This benefit, combined with the fast switching speed and ruggedized device  
design that HEXFET Power MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use in a wide variety of  
applications.  
The D2Pak is a surface mount power package capable of accommodating die  
sizes up to HEX-4. It provides the highest power capability and the lowest  
possible on-resistance in any existing surface mount package. The D2Pak is  
suitable for high current applications because of its low internal connection  
resistance and can dissipate up to 2.0W in a typical surface mount application.  
The through-hole version (IRFZ44EL) is available for low-profile applications.  
2
T O -262  
D
Pak  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10Vꢀ  
Continuous Drain Current, VGS @ 10Vꢀ  
Pulsed Drain Current ꢀ  
48  
34  
A
192  
110  
0.71  
± 20  
220  
29  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
11  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
1.4  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
www.irf.com  
1
11/18/97  

IRFZ44ES 替代型号

型号 品牌 替代类型 描述 数据表
IRFZ44ESTRRPBF INFINEON

类似代替

Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44ESTRLPBF INFINEON

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暂无描述
IRFZ44ESPBF INFINEON

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IRFZ44FX INFINEON

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IRFZ44L VISHAY

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