Datasheet > IRFZ44ESTRL

IRFZ44ESTRL

更新时间： 2024-09-16 21:18:51

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	169K
描述
Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

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替代型号

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IRFZ44ESTRL 数据手册

PD - 9.1714

IRFZ44ES/L

PRELIMINARY

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRFZ44ES)

V_DSS= 60V

l Low-profile through-hole (IRFZ44EL)

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 0.023Ω

l Fully Avalanche Rated

I_D= 48A

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of accommodating die

sizes up to HEX-4. It provides the highest power capability and the lowest

possible on-resistance in any existing surface mount package. The D²Pak is

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ44EL) is available for low-profile applications.

T O -262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

192

110

0.71

± 20

220

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

1.4

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

www.irf.com

11/18/97

12 3 4 5 6 7...10

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IRFZ44ESTRL 替代型号

型号	品牌	替代类型	描述	数据表
IRFZ44ESTRLPBF	INFINEON	类似代替	暂无描述
IRFZ44ESPBF	INFINEON	类似代替	HEXFET㈢ Power MOSFET

与IRFZ44ESTRL相关器件

型号	品牌	获取价格	描述	数据表
IRFZ44ESTRLPBF	INFINEON	获取价格	暂无描述
IRFZ44ESTRR	INFINEON	获取价格	Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44ESTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44F	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRFZ44FX	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRFZ44FXPBF	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRFZ44L	VISHAY	获取价格	Power MOSFET
IRFZ44L	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ44LPBF	VISHAY	获取价格	Power MOSFET
IRFZ44N	ISC	获取价格	isc N-Channel MOSFET Transistor

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