是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-247AC | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.1 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 340 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (Abs) (ID): | 20 A |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.24 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247AC |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 280 W |
最大脉冲漏极电流 (IDM): | 80 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFP460P | INFINEON |
获取价格 |
Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A) | |
IRFP460PBF | VISHAY |
获取价格 |
Power MOSFET | |
IRFP460PBF | INFINEON |
获取价格 |
Dynamic dv/dt Rating, Repetitive Avalanche Rated, Isolated Central Mounting Hole, Fast Swi | |
IRFP460PPBF | VISHAY |
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Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IRFP462 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 17A I(D) | TO-247 | |
IRFP4668 | INFINEON |
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The StrongIRFET™ power MOSFET family is optim | |
IRFP4668PBF | INFINEON |
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HEXFET Power MOSFET | |
IRFP470 | IXYS |
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N-Channel Enhancement Mode MegaMOS FET | |
IRFP4710 | INFINEON |
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Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A) | |
IRFP4710PBF | INFINEON |
获取价格 |
HEXFETPower MOSFET |