5秒后页面跳转
IRFP4768PBF PDF预览

IRFP4768PBF

更新时间: 2024-11-20 11:09:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲PC局域网
页数 文件大小 规格书
8页 331K
描述
HEXFET Power MOSFET

IRFP4768PBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.68Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:783765
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-247AC_2
Samacsys Released Date:2018-05-07 14:24:45Is Samacsys:N
雪崩能效等级(Eas):770 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (ID):93 A最大漏源导通电阻:0.0175 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):370 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFP4768PBF 数据手册

 浏览型号IRFP4768PBF的Datasheet PDF文件第2页浏览型号IRFP4768PBF的Datasheet PDF文件第3页浏览型号IRFP4768PBF的Datasheet PDF文件第4页浏览型号IRFP4768PBF的Datasheet PDF文件第5页浏览型号IRFP4768PBF的Datasheet PDF文件第6页浏览型号IRFP4768PBF的Datasheet PDF文件第7页 
PD - 97379  
IRFP4768PbF  
HEXFET® Power MOSFET  
D
S
Applications  
VDSS  
RDS(on) typ.  
250V  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
14.5m  
17.5m  
93A  
G
max.  
ID  
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
D
SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
S
D
G
TO-247AC  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Parameter  
Max.  
93  
Units  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
66  
A
370  
520  
3.4  
Pulsed Drain Current c  
Maximum Power Dissipation  
Linear Derating Factor  
PD @TC = 25°C  
W
W/°C  
V
VGS  
± 20  
24  
Gate-to-Source Voltage  
Peak Diode Recovery e  
Operating Junction and  
Storage Temperature Range  
dv/dt  
TJ  
V/ns  
-55 to + 175  
TSTG  
°C  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Mounting torque, 6-32 or M3 screw  
10lbfxin (1.1Nxm)  
Avalanche Characteristics  
Single Pulse Avalanche Energy d  
EAS (Thermally limited)  
770  
mJ  
A
Avalanche Current c  
IAR  
See Fig. 14, 15, 22a, 22b  
Repetitive Avalanche Energy c  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case ij  
Typ.  
–––  
Max.  
0.29  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
0.24  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
www.irf.com  
1
02/26/09  

IRFP4768PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFP4332PBF INFINEON

类似代替

PDP SWITCH
IRFP4229PBF INFINEON

类似代替

PDP SWITCH
IRFP4232PBF INFINEON

类似代替

PDP MOSFET

与IRFP4768PBF相关器件

型号 品牌 获取价格 描述 数据表
IRFP4868PBF INFINEON

获取价格

High Efficiency Synchronous Rectification in SMPS
IRFP4N100Q IXYS

获取价格

Transistor
IRFP7430 INFINEON

获取价格

The StrongIRFET™ power MOSFET family is optim
IRFP7430PBF INFINEON

获取价格

Brushed Motor drive applications
IRFP7530 INFINEON

获取价格

The StrongIRFET™ power MOSFET family is optim
IRFP7530PBF INFINEON

获取价格

Power Field-Effect Transistor,
IRFP7537 INFINEON

获取价格

The StrongIRFET™ power MOSFET family is optim
IRFP7537PBF INFINEON

获取价格

Power Field-Effect Transistor
IRFP7718PBF INFINEON

获取价格

Brushed Motor drive applications
IRFP7718PBF_15 INFINEON

获取价格

Brushed Motor drive applications