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IRFP4768PBF PDF预览

IRFP4768PBF

更新时间: 2024-02-21 11:09:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲PC局域网
页数 文件大小 规格书
8页 331K
描述
HEXFET Power MOSFET

IRFP4768PBF 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-247AC包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:3.87雪崩能效等级(Eas):770 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (ID):93 A
最大漏源导通电阻:0.0175 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):250极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):370 A认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN OVER NICKEL
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFP4768PBF 数据手册

 浏览型号IRFP4768PBF的Datasheet PDF文件第2页浏览型号IRFP4768PBF的Datasheet PDF文件第3页浏览型号IRFP4768PBF的Datasheet PDF文件第4页浏览型号IRFP4768PBF的Datasheet PDF文件第5页浏览型号IRFP4768PBF的Datasheet PDF文件第6页浏览型号IRFP4768PBF的Datasheet PDF文件第7页 
PD - 97379  
IRFP4768PbF  
HEXFET® Power MOSFET  
D
S
Applications  
VDSS  
RDS(on) typ.  
250V  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
14.5m  
17.5m  
93A  
G
max.  
ID  
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
D
SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
S
D
G
TO-247AC  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Parameter  
Max.  
93  
Units  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
66  
A
370  
520  
3.4  
Pulsed Drain Current c  
Maximum Power Dissipation  
Linear Derating Factor  
PD @TC = 25°C  
W
W/°C  
V
VGS  
± 20  
24  
Gate-to-Source Voltage  
Peak Diode Recovery e  
Operating Junction and  
Storage Temperature Range  
dv/dt  
TJ  
V/ns  
-55 to + 175  
TSTG  
°C  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Mounting torque, 6-32 or M3 screw  
10lbfxin (1.1Nxm)  
Avalanche Characteristics  
Single Pulse Avalanche Energy d  
EAS (Thermally limited)  
770  
mJ  
A
Avalanche Current c  
IAR  
See Fig. 14, 15, 22a, 22b  
Repetitive Avalanche Energy c  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case ij  
Typ.  
–––  
Max.  
0.29  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
0.24  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
www.irf.com  
1
02/26/09  

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