Datasheet > IRFP4668

IRFP4668

更新时间： 2024-09-14 11:15:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	295K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFP4668 数据手册

PD -97140

IRFP4668PbF

HEXFET^®Power MOSFET

Applications

V_DSS

200V

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

R_DS(on)typ.

8.0m

9.7m

max.

I_D

130A

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

TO-247AC

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current c

Max.

130

Units

520

P_D@T_C= 25°C

520

Maximum Power Dissipation

Linear Derating Factor

3.5

W/°C

V_GS

± 30

Gate-to-Source Voltage

Peak Diode Recovery e

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy d

E_{AS (Thermally limited)}

760

Avalanche Current c

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy f

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.29

–––

Units

R_θJC

Junction-to-Case j

R_θCS

Case-to-Sink, Flat Greased Surface

0.24

–––

°C/W

R_θJA

Junction-to-Ambient ij

www.irf.com

9/8/08

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