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IRFP4710 PDF预览

IRFP4710

更新时间: 2024-11-19 22:51:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 105K
描述
Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A)

IRFP4710 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:TO-247AC, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.21
Is Samacsys:N雪崩能效等级(Eas):190 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):72 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):300 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFP4710 数据手册

 浏览型号IRFP4710的Datasheet PDF文件第2页浏览型号IRFP4710的Datasheet PDF文件第3页浏览型号IRFP4710的Datasheet PDF文件第4页浏览型号IRFP4710的Datasheet PDF文件第5页浏览型号IRFP4710的Datasheet PDF文件第6页浏览型号IRFP4710的Datasheet PDF文件第7页 
PD - 94361  
IRFP4710  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Motor Control  
VDSS  
100V  
RDS(on) max  
ID  
72A  
0.014Ω  
l Uninterruptible Power Supplies  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
TO-247AC  
l Fully Characterized Avalanche Voltage  
and Current  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
72  
51  
A
300  
PD @TC = 25°C  
Power Dissipation  
190  
W
W/°C  
V
Linear Derating Factor  
1.2  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 20  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
8.2  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbfin (1.1Nm)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.81  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
Notes  through are on page 8  
www.irf.com  
1
01/08/02  

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