Datasheet > IRFP4768

IRFP4768

更新时间： 2024-11-21 11:14:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	470K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFP4768 数据手册

IRFP4768PbF

HEXFET^®Power MOSFET

Application

 High Efficiency Synchronous Rectification in SMPS

 Uninterruptible Power Supply

High Speed Power Switching

V_DSS

R_{DS(on) typ.}

max

250V

14.5m

17.5m

93A

 Hard Switched and High Frequency Circuits

I_D

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant

TO-247AC

Gate

Drain

Source

Standard Pack

Form

Base part number Package Type

Orderable Part Number

Quantity

IRFP4768PbF

TO-247AC

Tube

IRFP4768PbF

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

370

520

3.4

± 20

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

V/ns

T_J

T_STG

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Avalanche Characteristics

E_{AS (Thermally limited)}

770

Single Pulse Avalanche Energy 

I_AR

Avalanche Current 

See Fig. 14, 15, 22a, 22b

E_AR

Repetitive Avalanche Energy 

Thermal Resistance

Parameter

Typ.

–––

0.24

–––

Max.

0.29

–––

Units

Junction-to-Case 

R_JC

R_CS

R_JA

Case-to-Sink, Flat Greased Surface

°C/W

Junction-to-Ambient 

2016-12-12

12 3 4 5 6 7...9

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