Datasheet > IRFP4N100Q

IRFP4N100Q

更新时间： 2024-01-15 20:33:21

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	157K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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IRFP4N100Q 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

IRFP4N100Q 数据手册

HiPerFET^TM

Power MOSFETs

Q-Class

IXFA 4N100Q

IXFP 4N100Q

V_DSS

I_D25

=1000 V

4 A

R_DS(on)= 3.0 W

t_rr£ 250 ns

N-ChannelEnhancementMode

Avalanche Rated, Low Q_g, Highdv/dt

Preliminary Data Sheet

Symbol

TestConditions

Maximum Ratings

TO-220(IXFP)

V_DSS

V_DGR

T_J= 25°C to 150°C

1000

T_J= 25°C to 150°C; R_GS= 1 MW

D (TAB)

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

TO-263(IXFA)

E_AR

E_AS

T_C= 25°C

700

D (TAB)

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

G = Gate

S = Source

= Drain

P_D

T_C= 25°C

150

TAB = Drain

T_J

-55 to +150

150

°C

T_JM

T_stg

-55 to +150

Features

T_L

1.6 mm (0.063 in) from case for 10 s

Mounting torque (TO-220)

300

°C

^lIXYS advanced low Q_gprocess

^lLow gate charge and capacitances

- easier to drive

M_d

1.13/10 Nm/lb.in.

Weight

TO-220

TO-263

- faster switching

^lInternational standard packages

^lLow R_{DS (on)}

^lRated for unclamped Inductive load

Switching (UIS)

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

^lMolding epoxies meet UL 94 V-0

flammability classification

min.

typ.

max.

V_DSS

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 1.5 mA

1000

3.0

V_GS(th)

5.0

Advantages

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100

Easy to mount

Space savings

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

3.0

Pulse test, t £ 300 ms, duty cycle d £ 2 %

98705 (02/04/00)

12 3 4

中文翻译

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