IRFP460P

更新时间： 2024-09-12 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	177K
描述
Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

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数据手册

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IRFP460P 数据手册

PD-93946A

IRFP460P

l Dynamic dv/dt Rating

l Repetitive Avalanche Rated

l Isolated Central Mounting Hole

l Fast Switching

HEXFET^®Power MOSFET

V_DSS= 500V

l Ease of Paralleling

l Simple Drive Requirements

l Solder Plated for Reflowing

R_DS(on)= 0.27Ω

I_D= 20A

Description

Third Generation HEXFET^®s from International Rectifier

provide the designer with the best combination of fast

switching, ruggedized device design, low on-resistance

and cost-effectiveness.

TheTO-247packageispreferredfor commercial-industrial

applications where higher power levels preclude the use

of TO-220 devices. The TO-247 is similar but superior to

the earlier TO-218 package because of its isolated

mounting hole. It also provides greater creepage distance

between pins to meet the requirements of most safety

specifications.

TO-247AC

The solder plated version of the TO-247 allows the reflow

solderingof thepackageheatsink toa substratematerial.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

280

W/°C

Linear Derating Factor

2.2

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

960

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

3.5

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Maximum Reflow Temperature

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

230 (Time above 183 °C

should not exceed 100s)

°C

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.45

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.24

–––

°C/W

www.irf.com

01/17/01

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