5秒后页面跳转
IRFP9140 PDF预览

IRFP9140

更新时间: 2024-01-05 11:06:26
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 63K
描述
19A, 100V, 0.200 Ohm, P-Channel Power MOSFET

IRFP9140 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.91
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):19 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):150 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

IRFP9140 数据手册

 浏览型号IRFP9140的Datasheet PDF文件第2页浏览型号IRFP9140的Datasheet PDF文件第3页浏览型号IRFP9140的Datasheet PDF文件第4页浏览型号IRFP9140的Datasheet PDF文件第5页浏览型号IRFP9140的Datasheet PDF文件第6页浏览型号IRFP9140的Datasheet PDF文件第7页 
IRFP9140  
Data Sheet  
July 1999  
File Number 2292.4  
19A, 100V, 0.200 Ohm, P-Channel Power  
MOSFET  
Features  
• 19A, 100V  
This is an advanced power MOSFET designed, tested, and  
guaranteed to withstand a specified level of energy in the  
breakdown avalanche mode of operation. It is a P-Channel  
enhancement mode silicon gate power field effect transistor  
designed for applications such as switching regulators,  
switching convertors, motor drivers, relay drivers, and drivers  
for high power bipolar switching transistors requiring high  
speed and low gate drive power. These types can be  
operated directly from integrated circuits.  
• r  
= 0.200  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Symbol  
Formerly developmental type TA17521.  
D
Ordering Information  
PART NUMBER  
PACKAGE  
BRAND  
IRFP9140  
G
IRFP9140  
TO-247  
NOTE: When ordering, use the entire part number.  
S
Packaging  
JEDEC STYLE T0-247  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-57  

IRFP9140 替代型号

型号 品牌 替代类型 描述 数据表
IRFP9140PBF VISHAY

功能相似

Power MOSFET

与IRFP9140相关器件

型号 品牌 获取价格 描述 数据表
IRFP9140N INFINEON

获取价格

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
IRFP9140NHR INFINEON

获取价格

Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Me
IRFP9140NPBF INFINEON

获取价格

HEXFET㈢ Power MOSFET
IRFP9140PBF INFINEON

获取价格

HEXFET㈢ Power MOSFET
IRFP9140PBF VISHAY

获取价格

Power MOSFET
IRFP9140R ETC

获取价格

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 19A I(D) | TO-247
IRFP9141 SAMSUNG

获取价格

P-CHANNEL POWER MOSFETS
IRFP9141R ETC

获取价格

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 19A I(D) | TO-247
IRFP9142 SAMSUNG

获取价格

P-CHANNEL POWER MOSFETS
IRFP9142R ETC

获取价格

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-247