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IRFP4710PBF PDF预览

IRFP4710PBF

更新时间: 2024-11-20 12:26:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 183K
描述
HEXFETPower MOSFET

IRFP4710PBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.88Is Samacsys:N
雪崩能效等级(Eas):190 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):72 A最大漏极电流 (ID):72 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):190 W最大脉冲漏极电流 (IDM):300 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFP4710PBF 数据手册

 浏览型号IRFP4710PBF的Datasheet PDF文件第2页浏览型号IRFP4710PBF的Datasheet PDF文件第3页浏览型号IRFP4710PBF的Datasheet PDF文件第4页浏览型号IRFP4710PBF的Datasheet PDF文件第5页浏览型号IRFP4710PBF的Datasheet PDF文件第6页浏览型号IRFP4710PBF的Datasheet PDF文件第7页 
PD - 95055  
IRFP4710PbF  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
l Motor Control  
VDSS  
100V  
RDS(on) max  
ID  
72A  
0.014Ω  
l Uninterruptible Power Supplies  
l Lead-Free  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
TO-247AC  
l Fully Characterized Avalanche Voltage  
and Current  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
72  
51  
A
300  
PD @TC = 25°C  
Power Dissipation  
190  
W
W/°C  
V
Linear Derating Factor  
1.2  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 20  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
8.2  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Typ.  
–––  
0.24  
–––  
Max.  
0.81  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
°C/W  
Notes  through are on page 8  
www.irf.com  
1
2/26/04  

IRFP4710PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFP4410ZPBF INFINEON

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IRFP4310ZPBF INFINEON

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IRFP4710 INFINEON

类似代替

Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A)

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