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IRFP7537PBF PDF预览

IRFP7537PBF

更新时间: 2024-11-20 20:04:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 541K
描述
Power Field-Effect Transistor

IRFP7537PBF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:15 weeks风险等级:1.68
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IRFP7537PBF 数据手册

 浏览型号IRFP7537PBF的Datasheet PDF文件第2页浏览型号IRFP7537PBF的Datasheet PDF文件第3页浏览型号IRFP7537PBF的Datasheet PDF文件第4页浏览型号IRFP7537PBF的Datasheet PDF文件第5页浏览型号IRFP7537PBF的Datasheet PDF文件第6页浏览型号IRFP7537PBF的Datasheet PDF文件第7页 
StrongIRFET™  
IRFP7537PbF  
HEXFET® Power MOSFET  
Application  
Brushed Motor drive applications  
BLDC Motor drive applications  
Battery powered circuits  
Half-bridge and full-bridge topologies  
Synchronous rectifier applications  
Resonant mode power supplies  
OR-ing and redundant power switches  
DC/DC and AC/DC converters  
DC/AC Inverters  
VDSS  
60V  
RDS(on) typ.  
max  
2.75m  
3.30m  
ID  
172A  
S
Benefits  
D
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  
Fully Characterized Capacitance and Avalanche SOA  
Enhanced body diode dV/dt and dI/dt Capability  
Lead-Free, RoHS Compliant  
G
G
D
S
Gate  
Drain  
Source  
Base part number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
IRFP7537PbF  
TO-247  
Tube  
25  
IRFP7537PbF  
12  
10  
8
200  
150  
100  
50  
I
= 100A  
D
6
T
T
= 125°C  
= 25°C  
J
4
2
J
0
0
2
4
6
8
10 12 14 16 18 20  
25  
50  
75  
100  
125  
150  
175  
T
, Case Temperature (°C)  
V
Gate -to -Source Voltage (V)  
C
GS,  
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
1
www.irf.com  
© 2014 International Rectifier  
Submit Datasheet Feedback  
January 10, 2014  

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