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IRFP360 PDF预览

IRFP360

更新时间: 2024-11-28 22:51:39
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 59K
描述
23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

IRFP360 数据手册

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IRFP360  
Data Sheet  
July 1999  
File Number 2290.3  
23A, 400V, 0.200 Ohm, N-Channel Power  
MOSFET  
Features  
• 23A, 400V  
This advanced power MOSFET is designed, tested, and  
guaranteed to withstand a specified level of energy in the  
breakdown avalanche mode of operation. These are  
N-Channel enhancement mode silicon gate power field  
effect transistors designed for applications such as switching  
regulators, switching converters, motor drivers, relay drivers  
and drivers for high power bipolar switching transistors  
requiring high speed and low gate drive power. They can be  
operated directly from integrated circuits.  
• r  
= 0.200  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Related Literature  
Formerly developmental type TA17464.  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Ordering Information  
Symbol  
PART NUMBER  
PACKAGE  
BRAND  
IRFP360  
TO-247  
IRFP360  
D
NOTE: When ordering, use the entire part number.  
G
S
Packaging  
JEDEC STYLE TO-247  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-341  

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