Datasheet > IRFP4127PBF

IRFP4127PBF

更新时间： 2024-11-29 20:07:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	511K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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IRFP4127PBF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	15 weeks	风险等级：	1.69
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IRFP4127PBF 数据手册

IRFP4127PbF

HEXFET^®Power MOSFET

Application

 High Efficiency Synchronous Rectification in SMPS

 Uninterruptible Power Supply

High Speed Power Switching

V_DSS

200V

R_{DS(on) typ.}

17m

21m

 Hard Switched and High Frequency Circuits

max

I_D

75A

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant

TO-247AC

Gate

Drain

Source

Standard Pack

Form

Orderable Part Number

Base part number Package Type

Quantity

IRFP4127PbF

TO-247AC

Tube

IRFP4127PbF

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

300

341

2.3

± 20

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

V/ns

T_J

T_STG

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Avalanche Characteristics

E_{AS (Thermally limited)}

244

Single Pulse Avalanche Energy 

Thermal Resistance

Parameter

Junction-to-Case 

Typ.

–––

0.24

–––

Max.

0.4

Units

R_JC

R_CS

R_JA

Case-to-Sink, Flat Greased Surface

°C/W

–––

Junction-to-Ambient 

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March 09, 2015

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