IRFP360PBF

更新时间： 2024-01-17 02:23:48

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	963K
描述
Power MOSFET

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中文翻译

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数据手册
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IRFP360PBF 数据手册

IRFP360, SiHFP360

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rated

PRODUCT SUMMARY

V_DS(V)

400

Available

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

0.20

RoHS*

Q_g(Max.) (nC)

210

COMPLIANT

_gs(nC)

_gd(nC)

• Ease of Paralleling

110

Configuration

Single

• Simple Drive Requirements

• Lead (Pb)-free Available

TO-247

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole. It also provides greater creepage distance between

pins to meet the requirements of most safety specifications.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247

IRFP360PbF

SiHFP360-E3

IRFP360

Lead (Pb)-free

SnPb

SiHFP360

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

400

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

2.2

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

1200

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

280

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 4.0 mH, R_G= 25 Ω, I_AS= 23 A (see fig. 12).

c. I_SD≤ 23 A, dI/dt ≤ 170 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90292

S-81377-Rev. A, 30-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRFP360PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFP360PBF	INFINEON	类似代替	HEXFET㈢ Power MOSFET

与IRFP360PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFP362	NJSEMI	获取价格	Trans MOSFET N-CH 400V 23A 3-Pin(3+Tab) TO-247AD
IRFP3703	INFINEON	获取价格	Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm,
IRFP3703PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFP3710	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A)
IRFP3710HR	INFINEON	获取价格	Power Field-Effect Transistor, 57A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFP3710PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) =
IRFP4004PBF	INFINEON	获取价格	IRFP4004PBF
IRFP4110	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRFP4110PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFP4127	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil

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