生命周期: | Obsolete | 零件包装代码: | TO-3P |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
雪崩能效等级(Eas): | 280 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (Abs) (ID): | 4.5 A |
最大漏极电流 (ID): | 4.5 A | 最大漏源导通电阻: | 1.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 75 W | 最大功率耗散 (Abs): | 75 W |
最大脉冲漏极电流 (IDM): | 18 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 76 ns | 最大开启时间(吨): | 40 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFP431 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-247VAR |
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IRFP4310Z | ISC |
获取价格 |
N-Channel MOSFET Transistor |
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IRFP4310Z | INFINEON |
获取价格 |
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil |
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IRFP4310ZPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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IRFP432 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-o |
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IRFP4321 | INFINEON |
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The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil |
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IRFP4321PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET |
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IRFP433 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-247VAR |
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IRFP4332 | INFINEON |
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The StrongIRFET™ power MOSFET family is optim |
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IRFP4332PBF | INFINEON |
获取价格 |
PDP SWITCH |
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