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IRFP4229

更新时间： 2024-11-25 14:54:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 309K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFP4229 数据手册

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PD - 97079B  
IRFP4229PbF  
PDP SWITCH  
Features  
Key Parameters  
l
Advanced Process Technology  
VDS min  
250  
300  
38  
V
V
m
l
Key Parameters Optimized for PDP Sustain,  
Energy Recovery and Pass Switch Applications  
Low EPULSE Rating to Reduce Power  
Dissipation in PDP Sustain, Energy Recovery  
and Pass Switch Applications  
VDS (Avalanche) typ.  
RDS(ON) typ. @ 10V  
IRP max @ TC= 100°C  
TJ max  
l
87  
A
175  
°C  
l
l
Low QG for Fast Response  
High Repetitive Peak Current Capability for  
Reliable Operation  
D
D
l
Short Fall & Rise Times for Fast Switching  
l
175°C Operating Junction Temperature for  
Improved Ruggedness  
Repetitive Avalanche Capability for Robustness  
S
D
G
G
l
and Reliability  
S
TO-247AC  
G
D
S
Gate  
Drain  
Source  
Description  
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch  
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve  
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C  
operating junction temperature and high repetitive peak current capability. These features combine to  
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
VGS  
±30  
Gate-to-Source Voltage  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
44  
A
31  
180  
IRP @ TC = 100°C  
PD @TC = 25°C  
PD @TC = 100°C  
87  
Repetitive Peak Current  
310  
Power Dissipation  
W
150  
Power Dissipation  
2.0  
Linear Derating Factor  
W/°C  
°C  
TJ  
-40 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature for 10 seconds  
Mounting Torque, 6-32 or M3 Screw  
300  
10lb in (1.1N m)  
N
Thermal Resistance  
Parameter  
Typ.  
Max.  
0.49  
–––  
40  
Units  
Junction-to-Case  
Rθ  
Rθ  
Rθ  
–––  
0.24  
–––  
JC  
CS  
JA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
Notes  through ꢀare on page 8  
www.irf.com  
1
09/14/07  
1234567...9

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