Datasheet > IRFP4242PBF

IRFP4242PBF

更新时间： 2024-11-23 21:55:03

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管
页数	文件大小	规格书
8页	295K
描述
PDP MOSFET

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中文翻译

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IRFP4242PBF 数据手册

PD - 96966A

IRFP4242PbF

PDP MOSFET

Features

Key Parameters

Advanced process technology

V_DSmin

300

360

Key parameters optimized for PDP Sustain &

Energy Recovery applications

V_{DS (Avalanche)}typ.

R_DS(ON)typ. @ 10V

Low E_PULSErating to reduce the power

dissipation in Sustain & ER applications

Low Q_Gfor fast response

High repetitive peak current capability for

reliable operation

_RPmax @ T_C= 100°C

T_Jmax

175

°C

Short fall & rise times for fast switching

175°C operating junction temperature for

improved ruggedness

Repetitive avalanche capability for robustness

and reliability

TO-247AC

G ate

D rain

Source

Description

This HEXFET^®Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch

applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve

low on-resistance per silicon area and low E_PULSErating. Additional features of this MOSFET are 175°C

operating junction temperature and high repetitive peak current capability. These features combine to

make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Max.

Parameter

Gate-to-Source Voltage

Units

V_GS

±30

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

190

I_RP@ T_C= 100°C

P_D@T_C= 25°C

P_D@T_C= 100°C

Repetitive Peak Current

430

Power Dissipation

210

Power Dissipation

2.9

Linear Derating Factor

W/°C

°C

T_J

-40 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lb in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

Units

R_θJC

Junction-to-Case

0.35

°C/W

Notes through ꢀare on page 8

www.irf.com

7/25/05

12 3 4 5 6 7 8

中文翻译

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