Datasheet > IRFP4228PBF

IRFP4228PBF

更新时间： 2024-11-05 04:23:23

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
8页	672K
描述
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中文翻译

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数据手册

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IRFP4228PBF 数据手册

PD - 97229

IRFP4228PbF

PDP SWITCH

Features

Key Parameters

Advanced Process Technology

Key Parameters Optimized for PDP

Sustain, Energy Recovery and Pass

Switch Applications

V_DSmin

150

180

_{DS (Avalanche)}typ.

R_DS(ON)typ. @ 10V

I_RPmax @ T_C= 100°C

T_Jmax

Low E_PULSERating to Reduce Power

Dissipation in PDP Sustain, Energy

Recovery and Pass Switch Applications

Low Q_Gfor Fast Response

High Repetitive Peak Current Capability for

Reliable Operation

170

175

°C

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for

Improved Ruggedness

Repetitive Avalanche Capability for

Robustness and Reliability

TO-247AC

Gate

Drain

Source

Description

This HEXFET^®Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch

applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve

low on-resistance per silicon area and low E_PULSErating. Additional features of this MOSFET are 175°C

operating junction temperature and high repetitive peak current capability. These features combine to

make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Max.

±30

Parameter

Units

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

330

I_RP@ T_C= 100°C

P_D@T_C= 25°C

P_D@T_C= 100°C

170

Repetitive Peak Current

310

Power Dissipation

150

Power Dissipation

2.0

Linear Derating Factor

W/°C

°C

T_J

-40 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lb in (1.1N m)

Thermal Resistance

Parameter

Typ.

Max.

0.49

–––

Units

Junction-to-Case

R_θJC

–––

0.24

–––

°C/W

R_θ

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

R_θJA

Notes through are on page 8

www.irf.com

06/26/06

12 3 4 5 6 7 8

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