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IRFP4228PBF

更新时间: 2024-11-24 04:23:23
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
8页 672K
描述
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IRFP4228PBF 数据手册

 浏览型号IRFP4228PBF的Datasheet PDF文件第2页浏览型号IRFP4228PBF的Datasheet PDF文件第3页浏览型号IRFP4228PBF的Datasheet PDF文件第4页浏览型号IRFP4228PBF的Datasheet PDF文件第5页浏览型号IRFP4228PBF的Datasheet PDF文件第6页浏览型号IRFP4228PBF的Datasheet PDF文件第7页 
PD - 97229  
IRFP4228PbF  
PDP SWITCH  
Features  
Key Parameters  
l
Advanced Process Technology  
Key Parameters Optimized for PDP  
Sustain, Energy Recovery and Pass  
Switch Applications  
l
VDS min  
150  
180  
12  
V
V
m
V
DS (Avalanche) typ.  
RDS(ON) typ. @ 10V  
IRP max @ TC= 100°C  
TJ max  
l
Low EPULSE Rating to Reduce Power  
Dissipation in PDP Sustain, Energy  
Recovery and Pass Switch Applications  
Low QG for Fast Response  
High Repetitive Peak Current Capability for  
Reliable Operation  
170  
175  
A
°C  
l
l
D
D
l
Short Fall & Rise Times for Fast Switching  
S
l
175°C Operating Junction Temperature for  
Improved Ruggedness  
D
G
G
l
Repetitive Avalanche Capability for  
Robustness and Reliability  
TO-247AC  
S
G
D
S
Gate  
Drain  
Source  
Description  
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch  
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve  
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C  
operating junction temperature and high repetitive peak current capability. These features combine to  
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.  
Absolute Maximum Ratings  
Max.  
±30  
Parameter  
Units  
V
VGS  
Gate-to-Source Voltage  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
78  
A
55  
330  
IRP @ TC = 100°C  
PD @TC = 25°C  
PD @TC = 100°C  
170  
Repetitive Peak Current  
310  
Power Dissipation  
W
150  
Power Dissipation  
2.0  
Linear Derating Factor  
W/°C  
°C  
TJ  
-40 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature for 10 seconds  
Mounting Torque, 6-32 or M3 Screw  
300  
10lb in (1.1N m)  
N
Thermal Resistance  
Parameter  
Typ.  
Max.  
0.49  
–––  
40  
Units  
Junction-to-Case  
RθJC  
–––  
0.24  
–––  
°C/W  
Rθ  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
CS  
RθJA  
Notes  through †are on page 8  
www.irf.com  
1
06/26/06  

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