Datasheet > IRFP4228PBF

IRFP4228PBF

更新时间： 2024-02-18 23:21:32

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
8页	672K
描述
pop switch

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFP4228PBF 数据手册

PD - 97229

IRFP4228PbF

PDP SWITCH

Features

Key Parameters

Advanced Process Technology

Key Parameters Optimized for PDP

Sustain, Energy Recovery and Pass

Switch Applications

V_DSmin

150

180

_{DS (Avalanche)}typ.

R_DS(ON)typ. @ 10V

I_RPmax @ T_C= 100°C

T_Jmax

Low E_PULSERating to Reduce Power

Dissipation in PDP Sustain, Energy

Recovery and Pass Switch Applications

Low Q_Gfor Fast Response

High Repetitive Peak Current Capability for

Reliable Operation

170

175

°C

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for

Improved Ruggedness

Repetitive Avalanche Capability for

Robustness and Reliability

TO-247AC

Gate

Drain

Source

Description

This HEXFET^®Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch

applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve

low on-resistance per silicon area and low E_PULSErating. Additional features of this MOSFET are 175°C

operating junction temperature and high repetitive peak current capability. These features combine to

make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Max.

±30

Parameter

Units

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

330

I_RP@ T_C= 100°C

P_D@T_C= 25°C

P_D@T_C= 100°C

170

Repetitive Peak Current

310

Power Dissipation

150

Power Dissipation

2.0

Linear Derating Factor

W/°C

°C

T_J

-40 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lb in (1.1N m)

Thermal Resistance

Parameter

Typ.

Max.

0.49

–––

Units

Junction-to-Case

R_θJC

–––

0.24

–––

°C/W

R_θ

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

R_θJA

Notes through are on page 8

www.irf.com

06/26/06

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRFP4228PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFP4229	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRFP4229PBF	INFINEON	获取价格	PDP SWITCH
IRFP423	SAMSUNG	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFP4232PBF	INFINEON	获取价格	PDP MOSFET
IRFP4232PBF_07	INFINEON	获取价格	Advanced process technology
IRFP4242PBF	INFINEON	获取价格	PDP MOSFET
IRFP430	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 4.5A I(D) \| TO-247VAR
IRFP431	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 4.5A I(D) \| TO-247VAR
IRFP4310Z	ISC	获取价格	N-Channel MOSFET Transistor
IRFP4310Z	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil