Datasheet > IRFP4127

IRFP4127

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	516K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFP4127 数据手册

IRFP4127PbF

HEXFET^®Power MOSFET

Application

 High Efficiency Synchronous Rectification in SMPS

 Uninterruptible Power Supply

High Speed Power Switching

V_DSS

200V

R_{DS(on) typ.}

17m

21m

 Hard Switched and High Frequency Circuits

max

I_D

75A

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant

TO-247AC

Gate

Drain

Source

Standard Pack

Form

Orderable Part Number

Base part number Package Type

Quantity

IRFP4127PbF

TO-247AC

Tube

IRFP4127PbF

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

300

341

2.3

± 20

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

V/ns

T_J

T_STG

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Avalanche Characteristics

E_{AS (Thermally limited)}

244

Single Pulse Avalanche Energy 

Thermal Resistance

Parameter

Junction-to-Case 

Typ.

–––

0.24

–––

Max.

0.4

Units

R_JC

R_CS

R_JA

Case-to-Sink, Flat Greased Surface

°C/W

–––

Junction-to-Ambient 

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March 09, 2015

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