Datasheet > IRFP4127

IRFP4127

更新时间： 2024-03-04 09:49:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	516K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFP4127 数据手册

IRFP4127PbF

HEXFET^®Power MOSFET

Application

 High Efficiency Synchronous Rectification in SMPS

 Uninterruptible Power Supply

High Speed Power Switching

V_DSS

200V

R_{DS(on) typ.}

17m

21m

 Hard Switched and High Frequency Circuits

max

I_D

75A

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant

TO-247AC

Gate

Drain

Source

Standard Pack

Form

Orderable Part Number

Base part number Package Type

Quantity

IRFP4127PbF

TO-247AC

Tube

IRFP4127PbF

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

300

341

2.3

± 20

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

V/ns

T_J

T_STG

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Avalanche Characteristics

E_{AS (Thermally limited)}

244

Single Pulse Avalanche Energy 

Thermal Resistance

Parameter

Junction-to-Case 

Typ.

–––

0.24

–––

Max.

0.4

Units

R_JC

R_CS

R_JA

Case-to-Sink, Flat Greased Surface

°C/W

–––

Junction-to-Ambient 

www.irf.com

Submit Datasheet Feedback

March 09, 2015

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRFP4127相关器件

型号	品牌	获取价格	描述	数据表
IRFP4127PBF	INFINEON	获取价格	Power Field-Effect Transistor
IRFP4137PBF	INFINEON	获取价格	Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
IRFP420	SAMSUNG	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFP421	SAMSUNG	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFP422	SAMSUNG	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFP4227	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRFP4227PBF	INFINEON	获取价格	PDP SWITCH
IRFP4228PBF	INFINEON	获取价格	pop switch
IRFP4229	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRFP4229PBF	INFINEON	获取价格	PDP SWITCH