Datasheet > IRFP4232PBF

IRFP4232PBF

更新时间： 2024-01-18 18:55:04

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管
页数	文件大小	规格书
8页	294K
描述
PDP MOSFET

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IRFP4232PBF 数据手册

PD - 96965A

IRFP4232PbF

PDP MOSFET

Features

Key Parameters

Advanced process technology

V_DSmin

250

300

Key parameters optimized for PDP Sustain &

Energy Recovery applications

V_{DS (Avalanche)}typ.

R_DS(ON)typ. @ 10V

Low E_PULSErating to reduce the power

dissipation in Sustain & ER applications

Low Q_Gfor fast response

High repetitive peak current capability for

reliable operation

E_PULSEtyp.

310

117

175

µJ

I_RPmax @ T_C= 100°C

T_Jmax

°C

Short fall & rise times for fast switching

175°C operating junction temperature for

improved ruggedness

Repetitive avalanche capability for robustness

and reliability

TO-247AC

Description

This HEXFET^®Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch

applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve

low on-resistance per silicon area and low E_PULSErating. Additional features of this MOSFET are 175°C

operating junction temperature and high repetitive peak current capability. These features combine to

make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Max.

±20

Parameter

Gate-to-Source Voltage

Units

V_GS

V_GS(TRANSIENT)

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

±30

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current c

240

I_RP@ T_C= 100°C

P_D@T_C= 25°C

P_D@T_C= 100°C

117

Repetitive Peak Current g

Power Dissipation

430

210

Power Dissipation

2.9

Linear Derating Factor

W/°C

°C

T_J

-40 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lbxin (1.1Nxm)

Thermal Resistance

Parameter

Junction-to-Case f

Typ.

–––

Max.

Units

R_θJC

0.35

°C/W

Notes through ꢀare on page 8

www.irf.com

04/21/05

12 3 4 5 6 7 8

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IRFP4232PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFP4768PBF	INFINEON	类似代替	HEXFET Power MOSFET
IRFP4332PBF	INFINEON	类似代替	PDP SWITCH

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