Datasheet > IRFP4110

IRFP4110

更新时间： 2023-09-03 20:28:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	297K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFP4110 数据手册

PD - 97311

IRFP4110PbF

Applications

HEXFET^®Power MOSFET

l High Efficiency Synchronous Rectification in SMPS

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

100V

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

3.7m

4.5m

180A

120A

Benefits

l Improved Gate, Avalanche and Dynamic dv/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

TO-247AC

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Max.

180c

130c

120

Units

I_D@ T_C= 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

670

P_D@T_C= 25°C

370

Maximum Power Dissipation

2.5

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

5.3

Peak Diode Recovery f

dv/dt

T_J

V/ns

°C

-55 to + 175

300

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

190

108

Avalanche Currentꢀd

I_AR

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Junction-to-Case k

Typ.

–––

Max.

Units

R_θJC

0.402

–––

R_θCS

R_θJA

0.24

–––

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient j

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03/03/08

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