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IRFP4310Z PDF预览

IRFP4310Z

更新时间: 2024-11-25 01:21:31
品牌 Logo 应用领域
无锡固电 - ISC /
页数 文件大小 规格书
2页 336K
描述
N-Channel MOSFET Transistor

IRFP4310Z 数据手册

 浏览型号IRFP4310Z的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc N-Channel MOSFET Transistor  
IRFP4368IIRFP4368  
·FEATURES  
·Static drain-source on-resistance:  
RDS(on)1.85m  
·Enhancement mode:  
Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA)  
·100% avalanche tested  
·Minimum Lot-to-Lot variations for robust device  
performance and reliable operation  
·DESCRITION  
·High Efficiency Synchronous Rectification in SMPS  
·Uninterruptible Power Supply  
·High Speed Power Switching  
·Hard Switched And High Frequency Circuits  
·ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VDSS  
VGS  
ID  
PARAMETER  
VALUE  
75  
UNIT  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
±20  
195  
Drain Current-Continuous  
Drain Current-Single Pulsed  
Total Dissipation @TC=25℃  
Max. Operating Junction Temperature  
Storage Temperature  
A
IDM  
1280  
520  
A
PD  
W
175  
Tj  
-55~175  
Tstg  
·THERMAL CHARACTERISTICS  
SYMBOL  
Rth(j-c)  
PARAMETER  
MAX  
UNIT  
/W  
/W  
Channel-to-case thermal resistance  
0.29  
40  
Channel-to-ambient thermal resistance  
Rth(j-a)  
1
isc websitewww.iscsemi.cn  
isc & iscsemi is registered trademark  

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