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IRFP4232PBF_07 PDF预览

IRFP4232PBF_07

更新时间: 2024-11-24 11:09:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 291K
描述
Advanced process technology

IRFP4232PBF_07 数据手册

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PD - 96965A  
IRFP4232PbF  
PDP MOSFET  
Features  
Key Parameters  
l
Advanced process technology  
VDS min  
250  
300  
30  
V
V
l
Key parameters optimized for PDP Sustain &  
Energy Recovery applications  
VDS (Avalanche) typ.  
RDS(ON) typ. @ 10V  
EPULSE typ.  
l
Low EPULSE rating to reduce the power  
dissipation in Sustain & ER applications  
Low QG for fast response  
High repetitive peak current capability for  
reliable operation  
m
310  
117  
175  
µJ  
A
l
l
IRP max @ TC= 100°C  
TJ max  
°C  
l
Short fall & rise times for fast switching  
l175°C operating junction temperature for  
D
improved ruggedness  
l
Repetitive avalanche capability for robustness  
and reliability  
G
TO-247AC  
S
Description  
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch  
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve  
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C  
operating junction temperature and high repetitive peak current capability. These features combine to  
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.  
Absolute Maximum Ratings  
Max.  
±20  
Parameter  
Gate-to-Source Voltage  
Units  
VGS  
V
VGS (TRANSIENT)  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
±30  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
60  
A
42  
240  
IRP @ TC = 100°C  
PD @TC = 25°C  
PD @TC = 100°C  
117  
Repetitive Peak Current  
430  
Power Dissipation  
W
210  
Power Dissipation  
2.9  
Linear Derating Factor  
W/°C  
°C  
TJ  
-40 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature for 10 seconds  
Mounting Torque, 6-32 or M3 Screw  
300  
10lb in (1.1N m)  
N
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
Units  
Rθ  
Junction-to-Case  
0.35  
°C/W  
JC  
Notes  through are on page 8  
www.irf.com  
1
09/14/07  

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