IRFP3710HR PDF预览

IRFP3710HR

更新时间: 2025-07-26 20:04:11
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页数 文件大小 规格书
9页 401K
描述
Power Field-Effect Transistor, 57A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN

IRFP3710HR 数据手册

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PD-91490C  
IRFP3710  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 100V  
R
DS(on) = 0.025W  
l Fully Avalanche Rated  
G
ID = 57A  
Description  
S
FifthGenerationHEXFETsfromInternationalRectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The TO-247 package is preferred for commercial-  
industrial applications where higher power levels  
preclude the use of TO-220 devices. The TO-247 is  
similar but superior to the earlier TO-218 package  
because of its isolated mounting hole.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
57  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V ꢀ  
Continuous Drain Current, VGS @ 10V ꢀ  
Pulsed Drain Current ꢀ  
40  
A
180  
200  
1.3  
± 20  
530  
28  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Currentꢀ  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
20  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RqJC  
RqCS  
RqJA  
0.75  
–––  
40  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
www.irf.com  
1

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