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IRFP4321PBF PDF预览

IRFP4321PBF

更新时间: 2024-11-05 04:23:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
8页 288K
描述
HEXFET Power MOSFET

IRFP4321PBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.11Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:906889
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO247AC
Samacsys Released Date:2019-09-26 03:39:17Is Samacsys:N
雪崩能效等级(Eas):210 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (Abs) (ID):78 A最大漏极电流 (ID):75 A
最大漏源导通电阻:0.0155 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):310 W
最大脉冲漏极电流 (IDM):330 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFP4321PBF 数据手册

 浏览型号IRFP4321PBF的Datasheet PDF文件第2页浏览型号IRFP4321PBF的Datasheet PDF文件第3页浏览型号IRFP4321PBF的Datasheet PDF文件第4页浏览型号IRFP4321PBF的Datasheet PDF文件第5页浏览型号IRFP4321PBF的Datasheet PDF文件第6页浏览型号IRFP4321PBF的Datasheet PDF文件第7页 
PD - 97106  
IRFP4321PbF  
HEXFET® Power MOSFET  
Applications  
l Motion Control Applications  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l Hard Switched and High Frequency Circuits  
VDSS  
RDS(on) typ.  
150V  
12m:  
Benefits  
15.5m:  
max.  
l Low RDSON Reduces Losses  
l Low Gate Charge Improves the Switching  
Performance  
l Improved Diode Recovery Improves Switching &  
EMI Performance  
ID  
78A  
D
S
D
l 30V Gate Voltage Rating Improves Robustness  
l Fully Characterized Avalanche SOA  
S
D
G
G
TO-247AC  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Parameter  
Continuous Drain Current, VGS @ 10V  
Max.  
78 c  
55  
Units  
A
Continuous Drain Current, VGS @ 10V  
330  
Pulsed Drain Current d  
Maximum Power Dissipation  
Linear Derating Factor  
PD @TC = 25°C  
310  
W
2.0  
W/°C  
V
VGS  
±30  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy e  
EAS (Thermally limited)  
210  
mJ  
°C  
TJ  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lbxin (1.1Nxm)  
Mounting torque, 6-32 or M3 screw  
Thermal Resistance  
Parameter  
Junction-to-Case g  
Typ.  
–––  
0.24  
–––  
Max.  
0.49  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat, Greased Surface  
°C/W  
Junction-to-Ambient g  
www.irf.com  
1
6/23/06  

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