Datasheet > IRFP4332

IRFP4332

更新时间： 2024-10-01 11:15:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	307K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFP4332 数据手册

PD - 97100B

IRFP4332PbF

PDP SWITCH

Features

Key Parameters

Advanced Process Technology

V_DSmin

250

300

Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

Low E_PULSERating to Reduce Power

Dissipation in PDP Sustain, Energy Recovery

and Pass Switch Applications

V_{DS (Avalanche)}typ.

R_DS(ON)typ. @ 10V

T_Jmax

175

°C

Low Q_Gfor Fast Response

High Repetitive Peak Current Capability for

Reliable Operation

Short Fall & Rise Times for Fast Switching

l175°C Operating Junction Temperature for

Improved Ruggedness

Repetitive Avalanche Capability for Robustness

and Reliability

TO-247AC

Gate

Drain

Source

Description

This HEXFET^®Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch

applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve

low on-resistance per silicon area and low E_PULSErating. Additional features of this MOSFET are 175°C

operating junction temperature and high repetitive peak current capability. These features combine to

make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Max.

±30

Parameter

Gate-to-Source Voltage

Units

V_GS

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

230

I_RP@ T_C= 100°C

P_D@T_C= 25°C

P_D@T_C= 100°C

120

Repetitive Peak Current

360

Power Dissipation

180

Power Dissipation

2.4

Linear Derating Factor

W/°C

°C

T_J

-40 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lb in (1.1N m)

Thermal Resistance

Parameter

Typ.

Max.

0.42

–––

Units

Junction-to-Case

R_θ

–––

0.24

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

°C/W

R_θJA

Notes through are on page 9

www.irf.com

12/15/09

12 3 4 5 6 7...10

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