Datasheet > IRFP4321

IRFP4321

更新时间： 2024-11-25 14:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	298K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFP4321 数据手册

PD - 97106

IRFP4321PbF

HEXFET^®Power MOSFET

Applications

l Motion Control Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

150V

12m:

Benefits

15.5m:

max.

l Low R_DSONReduces Losses

l Low Gate Charge Improves the Switching

Performance

l Improved Diode Recovery Improves Switching &

EMI Performance

I_D

78A

l 30V Gate Voltage Rating Improves Robustness

l Fully Characterized Avalanche SOA

TO-247AC

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

78 c

Units

Continuous Drain Current, V_GS@ 10V

330

Pulsed Drain Current d

Maximum Power Dissipation

Linear Derating Factor

P_D@T_C= 25°C

310

2.0

W/°C

V_GS

±30

Gate-to-Source Voltage

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

210

°C

T_J

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Junction-to-Case g

Typ.

–––

0.24

–––

Max.

0.49

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

°C/W

Junction-to-Ambient g

www.irf.com

6/23/06

12 3 4 5 6 7...10

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