IRFN140

更新时间： 2024-11-19 22:24:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲
页数	文件大小	规格书
6页	185K
描述
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=28A)

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IRFN140 数据手册

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Provisional Data Sheet No. PD-9.1546

HEXFET^®POWER MOSFET

IRFN140

N-CHANNEL

Product Summary

100 Volt, 0.077Ω HEXFET

Part Number

BVDSS

RDS(on)

HEXFETtechnology is the key to International Rectifier’s

advanced line of power MOSFET transistors.The effi-

cient geometry achieves very low on-stateresistancecom-

binedwithhightransconductance.

IRFN140

100V

0.077Ω

28A

Features:

HEXFET transistors also feature all of the well-establish

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical param-

eter temperature stability. They are well-suited for appli-

cations such as switching power supplies, motor controls,

inverters, choppers, audio amplifiers, and high energy

pulse circuits.

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-weight

The Surface Mount Device (SMD-1) package represents

another step in the continual evolution of surface mount

technology. The SMD-1 will give designers the extra flex-

ibility they need to increase circuit board density. Inter-

national Rectifier has engineered the SMD-1 package to

meet the specific needs of the power market by increas-

ing the size of the termination pads, thereby enhancing

thermal and electrical performance.

Absolute Maximum Ratings

Parameter

= 10V, T = 25°C Continuous Drain Current

IRFN140

Units

@ V

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

112

125

1.0

@ T = 25°C

W/K ➄

±20

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

250

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

12.5

dv/dt

5.5

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

(for 5 seconds)

2.6 (typical)

Package Mounting Surface Temperature

Weight

300

To Order

12 3 4 5 6

中文翻译

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IRFN140 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N7224U	INFINEON	完全替代	100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7224U with Hermetic Pac
IRFM140	INFINEON	类似代替	HEXFET TRANSISTOR
2N7224	MICROSEMI	功能相似	N-CHANNEL MOSFET

与IRFN140相关器件

型号	品牌	获取价格	描述	数据表
IRFN140PBF	INFINEON	获取价格	暂无描述
IRFN140SMD	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET
IRFN150	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A)
IRFN150PBF	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Me
IRFN150SMD	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET
IRFN214B	FAIRCHILD	获取价格	250V N-Channel MOSFET
IRFN214BTA_FP001	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.6A I(D), 250V, 1-Element, N-Channel, Silicon, Meta
IRFN240	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)
IRFN240SMD	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET
IRFN250	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A)

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