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IRFN150 PDF预览

IRFN150

更新时间: 2024-11-04 22:24:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 189K
描述
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A)

IRFN150 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:HERMETIC SEALED, SMD1, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.09
Is Samacsys:N其他特性:HIGH RELIABILITY
雪崩能效等级(Eas):150 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):27 A最大漏极电流 (ID):34 A
最大漏源导通电阻:0.081 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CBCC-N3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
最大脉冲漏极电流 (IDM):136 A认证状态:Not Qualified
参考标准:MIL-19500/592子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFN150 数据手册

 浏览型号IRFN150的Datasheet PDF文件第2页浏览型号IRFN150的Datasheet PDF文件第3页浏览型号IRFN150的Datasheet PDF文件第4页浏览型号IRFN150的Datasheet PDF文件第5页浏览型号IRFN150的Datasheet PDF文件第6页 
Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1547  
HEXFET® POWER MOSFET  
IRFN150  
N-CHANNEL  
Product Summary  
100 Volt, 0.060HEXFET  
Part Number  
BVDSS  
RDS(on)  
ID  
HEXFETtechnology is the key to International Rectifier’s  
advanced line of power MOSFET transistors.The effi-  
cient geometry achieves very low on-stateresistancecom-  
binedwithhightransconductance.  
IRFN150  
100V  
0.060Ω  
34A  
Features:  
HEXFET transistors also feature all of the well-establish  
advantages of MOSFETs, such as voltage control, very  
fast switching, ease of paralleling and electrical param-  
eter temperature stability. They are well-suited for appli-  
cations such as switching power supplies, motor controls,  
inverters, choppers, audio amplifiers, and high energy  
pulse circuits.  
Avalanche Energy Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Light-weight  
The Surface Mount Device (SMD-1) package represents  
another step in the continual evolution of surface mount  
technology. The SMD-1 will give designers the extra flex-  
ibility they need to increase circuit board density. Inter-  
national Rectifier has engineered the SMD-1 package to  
meet the specific needs of the power market by increas-  
ing the size of the termination pads, thereby enhancing  
thermal and electrical performance.  
Absolute Maximum Ratings  
Parameter  
= 10V, T = 25°C Continuous Drain Current  
C
IRFN150  
34  
Units  
I
@ V  
D
GS  
A
I
D
@ V  
= 10V, T = 100°C Continuous Drain Current  
21  
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
136  
150  
1.2  
DM  
@ T = 25°C  
P
W
W/K ➄  
V
D
C
V
±20  
GS  
E
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
150  
34  
mJ  
AS  
I
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
15  
mJ  
AR  
dv/dt  
5.5  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
(for 5 seconds)  
2.6 (typical)  
Package Mounting Surface Temperature  
Weight  
300  
To Order  
 
 

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REPETITIVE AVALANCHE RATED AND dv/dt RATED
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