IRFN350PBF

更新时间： 2024-02-11 04:48:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	183K
描述
Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

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IRFN350PBF 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	UNCASED CHIP, R-XUUC-N3
Reach Compliance Code：	compliant	风险等级：	5.75
配置：	SINGLE	最小漏源击穿电压：	400 V
最大漏极电流 (ID)：	11 A	最大漏源导通电阻：	0.415 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-XUUC-N3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	UNCASED CHIP
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	UPPER
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管元件材料：	SILICON
Base Number Matches：	1

IRFN350PBF 数据手册

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Provisional Data Sheet No. PD-9.1551

HEXFET^®POWER MOSFET

IRFN350

N-CHANNEL

Product Summary

400 Volt, 0.315Ω HEXFET

Part Number

BVDSS

RDS(on)

HEXFETtechnology is the key to International Rectifier’s

advanced line of power MOSFET transistors.The effi-

cient geometry achieves very low on-stateresistancecom-

binedwithhightransconductance.

IRFN350

400V

0.315Ω

14A

Features:

HEXFET transistors also feature all of the well-establish

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical param-

eter temperature stability. They are well-suited for appli-

cations such as switching power supplies, motor controls,

inverters, choppers, audio amplifiers, and high energy

pulse circuits.

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-weight

The Surface Mount Device (SMD-1) package represents

another step in the continual evolution of surface mount

technology. The SMD-1 will give designers the extra flex-

ibility they need to increase circuit board density. Inter-

national Rectifier has engineered the SMD-1 package to

meet the specific needs of the power market by increas-

ing the size of the termination pads, thereby enhancing

thermal and electrical performance.

Absolute Maximum Ratings

Parameter

= 10V, T = 25°C Continuous Drain Current

IRFN350

Units

@ V

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

150

1.2

W/K ➄

±20

Single Pulse Avalanche Energy ➁

Avalanche Current ➀

700

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➂

Operating Junction

dv/dt

4.0

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

(for 5 seconds)

2.6 (typical)

Package Mounting Surface Temperature

Weight

300

To Order

12 3 4 5 6

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