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Provisional Data Sheet No. PD-9.1553
HEXFET® POWER MOSFET
IRFN9140
N-CHANNEL
Product Summary
-100 Volt, 0.20Ω HEXFET
Part Number
BVDSS
RDS(on)
ID
HEXFETtechnology is the key to International Rectifier’s
advanced line of power MOSFET transistors.The effi-
cient geometry achieves very low on-stateresistancecom-
binedwithhightransconductance.
IRFN9140
-100V
0.20Ω
-18A
Features:
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits.
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Light-weight
The Surface Mount Device (SMD-1) package represents
another step in the continual evolution of surface mount
technology. The SMD-1 will give designers the extra flex-
ibility they need to increase circuit board density. Inter-
national Rectifier has engineered the SMD-1 package to
meet the specific needs of the power market by increas-
ing the size of the termination pads, thereby enhancing
thermal and electrical performance.
Absolute Maximum Ratings
Parameter
= -10V, T = 25°C Continuous Drain Current
C
IRFN9140
-18
Units
I
@ V
D
GS
A
I
D
@ V
= -10V, T = 100°C Continuous Drain Current
-11
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
-72
DM
@ T = 25°C
P
125
W
W/K ➄
V
D
C
1.0
V
±20
GS
E
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
500
-18
mJ
AS
I
A
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
12.5
mJ
AR
dv/dt
-5.0
V/ns
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
(for 5 seconds)
2.6 (typical)
Package Mounting Surface Temperature
Weight
300
To Order