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IRFN9140 PDF预览

IRFN9140

更新时间: 2024-11-23 22:24:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
6页 187K
描述
POWER MOSFET N-CHANNEL(BVdss=-100V, Rds(on)=0.20ohm, Id=-18A)

IRFN9140 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1553  
HEXFET® POWER MOSFET  
IRFN9140  
N-CHANNEL  
Product Summary  
-100 Volt, 0.20HEXFET  
Part Number  
BVDSS  
RDS(on)  
ID  
HEXFETtechnology is the key to International Rectifier’s  
advanced line of power MOSFET transistors.The effi-  
cient geometry achieves very low on-stateresistancecom-  
binedwithhightransconductance.  
IRFN9140  
-100V  
0.20Ω  
-18A  
Features:  
HEXFET transistors also feature all of the well-establish  
advantages of MOSFETs, such as voltage control, very  
fast switching, ease of paralleling and electrical param-  
eter temperature stability. They are well-suited for appli-  
cations such as switching power supplies, motor controls,  
inverters, choppers, audio amplifiers, and high energy  
pulse circuits.  
Avalanche Energy Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Light-weight  
The Surface Mount Device (SMD-1) package represents  
another step in the continual evolution of surface mount  
technology. The SMD-1 will give designers the extra flex-  
ibility they need to increase circuit board density. Inter-  
national Rectifier has engineered the SMD-1 package to  
meet the specific needs of the power market by increas-  
ing the size of the termination pads, thereby enhancing  
thermal and electrical performance.  
Absolute Maximum Ratings  
Parameter  
= -10V, T = 25°C Continuous Drain Current  
C
IRFN9140  
-18  
Units  
I
@ V  
D
GS  
A
I
D
@ V  
= -10V, T = 100°C Continuous Drain Current  
-11  
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
-72  
DM  
@ T = 25°C  
P
125  
W
W/K ➄  
V
D
C
1.0  
V
±20  
GS  
E
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
500  
-18  
mJ  
AS  
I
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
12.5  
mJ  
AR  
dv/dt  
-5.0  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
(for 5 seconds)  
2.6 (typical)  
Package Mounting Surface Temperature  
Weight  
300  
To Order  
 
 

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