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IRFN5210 PDF预览

IRFN5210

更新时间: 2024-11-24 05:39:31
品牌 Logo 应用领域
SEME-LAB /
页数 文件大小 规格书
2页 41K
描述
P-CHANNEL POWER MOSFET

IRFN5210 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-276AB
包装说明:CHIP CARRIER, R-CBCC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.32其他特性:AVALANCHE RATED
雪崩能效等级(Eas):780 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):34 A最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-276AB
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

IRFN5210 数据手册

 浏览型号IRFN5210的Datasheet PDF文件第2页 
IRFN5210  
MECHANICAL DATA  
Dimensions in mm (inches)  
P–CHANNEL  
POWER MOSFET  
0
.
8
9
(
0
.
0
3
5
)
m
i
n
.
3
.
7
0
(
0
.
1
4
6
)
3
.
7
0
(
0
.
1
4
6
)
3
.
6
0
(
0
.
1
4
2
)
VDSS  
ID(cont)  
RDS(on)  
-100V  
-31A  
3
.
4
1
(
0
.
1
3
4
)
3
.
4
1
(
0
.
1
3
4
)
M
a
x
.
1
3
Ω
0.060  
FEATURES  
2
• HERMETICALLY SEALED SURFACE  
MOUNT PACKAGE  
• SMALL FOOTPRINT – EFFICIENT USE OF  
PCB SPACE.  
9
.
6
7
(
0
.
3
8
1
)
• SIMPLE DRIVE REQUIREMENTS  
• LIGHTWEIGHT  
9
.
3
8
(
0
.
3
6
9
)
0
0
.
.
5
0
(
0
.
0
2
0
)
1
1
.
5
8
(
0
.
4
5
6
)
2
6
(
0
.
0
1
0
)
1
1
.
2
8
(
0
.
4
4
4
)
• HIGH PACKING DENSITIES  
SMD 1 PACKAGE (TO-276AB)  
Pad 1 – Source  
Pad 2 – Drain  
Pad 3 – Gate  
Note: IRF5210SMD also available with  
pins 1 and 3 reversed.  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
V
Gate – Source Voltage  
Continuous Drain Current  
Continuous Drain Current  
20V  
-31A  
GS  
I
I
I
(V = 0 , T  
= 25°C)  
D
GS  
case  
case  
(V = 0 , T  
= 100°C)  
-19A  
D
GS  
1
Pulsed Drain Current  
-124A  
DM  
P
Power Dissipation @ T = 25°C  
case  
125W  
D
Linear Derating Factor  
1.0W/°C  
340mJ  
4.0V/ns  
–55 to 150°C  
300°C  
2
E
Single Pulse Avalanche Energy  
AS  
3
dv/dt  
T , T  
Peak Diode Recovery  
Operating and Storage Temperature Range  
J
stg  
T
Package Mounting Surface Temperature (for 5 sec)  
Thermal Resistance Junction to Case  
L
R
1.0°C/W  
θJC  
Notes 1) Pulse Test: Pulse Width 300ms, δ ≤ 2%  
2) @ V = -25V , L = 1.9mH , Peak I = -19A , V  
= -10V, R = 25Ω, Starting T = 25°C  
DD  
AS  
J
GS  
G
3) @ I -19A , di/dt -390A/μs , V -100V , T 150°C  
SD  
DD  
J
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Document Number 5587  
Issue 1  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  

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