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JANTXV2N7224U PDF预览

JANTXV2N7224U

更新时间: 2024-11-19 14:56:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 166K
描述
100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7224U with Hermetic Packaging

JANTXV2N7224U 数据手册

 浏览型号JANTXV2N7224U的Datasheet PDF文件第2页浏览型号JANTXV2N7224U的Datasheet PDF文件第3页浏览型号JANTXV2N7224U的Datasheet PDF文件第4页浏览型号JANTXV2N7224U的Datasheet PDF文件第5页浏览型号JANTXV2N7224U的Datasheet PDF文件第6页浏览型号JANTXV2N7224U的Datasheet PDF文件第7页 
PD - 91547C  
IRFN150  
JANTX2N7224U  
JANTXV2N7224U  
POWER MOSFET  
SURFACE MOUNT(SMD-1)  
REF:MIL-PRF-19500/592  
100V, N-CHANNEL  
HEXFET® MOSFETTECHNOLOGY  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFN150  
0.07 Ω  
34A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state re-  
sistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advan-  
tages of MOSFETs, such as voltage control, very fast switch-  
ing, ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
SMD-1  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Surface Mount  
Dynamic dv/dt Rating  
n Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
34  
21  
D
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
D
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
136  
150  
1.2  
±20  
150  
34  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
GS  
E
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
5.5  
T
-55 to 150  
J
T
Storage Temperature Range  
Package Mounting Surface Temperature  
Weight  
oC  
g
STG  
300(for 5 seconds)  
2.6 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
1/28/02  

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