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JANTXV2N7225U

更新时间： 2024-11-19 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 155K
描述
200V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7225U with Hermetic Packaging

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中文翻译

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JANTXV2N7225U 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：HERMETIC SEALED, SMD1, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.17
Is Samacsys：N其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：500 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：27.4 A最大漏极电流 (ID)：27.4 A
最大漏源导通电阻：0.105 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：150 W
最大脉冲漏极电流 (IDM)：110 A认证状态：Qualified
参考标准：MIL-19500/592子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

JANTXV2N7225U 数据手册

 浏览型号JANTXV2N7225U的Datasheet PDF文件第2页浏览型号JANTXV2N7225U的Datasheet PDF文件第3页浏览型号JANTXV2N7225U的Datasheet PDF文件第4页浏览型号JANTXV2N7225U的Datasheet PDF文件第5页浏览型号JANTXV2N7225U的Datasheet PDF文件第6页浏览型号JANTXV2N7225U的Datasheet PDF文件第7页 
PD - 91549C  
IRFN250  
JANTX2N7225U  
JANTXV2N7225U  
POWER MOSFET  
SURFACE MOUNT(SMD-1)  
REF:MIL-PRF-19500/592  
200V, N-CHANNEL  
HEXFET® MOSFETTECHNOLOGY  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFN250  
0.100 Ω  
27.4A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state re-  
sistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advan-  
tages of MOSFETs, such as voltage control, very fast switch-  
ing, ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
SMD-1  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Surface Mount  
Dynamic dv/dt Rating  
n Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
27.4  
D
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
17  
110  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
±20  
GS  
E
500  
mJ  
A
AS  
I
27.4  
15  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
mJ  
V/ns  
5.0  
T
-55 to 150  
J
T
Storage Temperature Range  
Package Mounting Surface Temperature  
Weight  
oC  
g
STG  
300(for 5 seconds)  
2.6 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
1/28/01  
1234567

中文翻译

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