PD - 90493F
IRFM450
JANTX2N7228
JANTXV2N7228
POWER MOSFET
THRU-HOLE (TO-254AA)
REF: MIL-PRF-19500/592
500V, N-CHANNEL
HEXFET® MOSFET TECHNOLOGY
Product Summary
Part Number
RDS(on)
ID
IRFM450
0.415 Ω
12A
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
12
8.0
48
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
150
1.2
±20
750
12
W
W/°C
V
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
AS
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
15
mJ
V/ns
AR
dv/dt
3.5
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
1
02/05/02