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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| JANTXV2N72281N6072E3 | MICROSEMI |
获取价格 |
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 |
|
| JANTXV2N7228D | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Me |
|
| JANTXV2N7228U | INFINEON |
获取价格 |
POWER MOSFET SURFACE MOUNT(SMD-1) |
|
| JANTXV2N7236 | INFINEON |
获取价格 |
POWER MOSFET THRU-HOLE (TO-254AA) |
|
| JANTXV2N7236D | INFINEON |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Met |
|
| JANTXV2N7236U | INFINEON |
获取价格 |
POWER MOSFET SURFACE MOUNT (SMD-1) |
|
| JANTXV2N7236U | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Met |
|
| JANTXV2N7237 | INFINEON |
获取价格 |
POWER MOSFET THRU-HOLE (TO-254AA) |
|
| JANTXV2N7237D | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Met |
|
| JANTXV2N7237U | INFINEON |
获取价格 |
-200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7237U with Hermetic Pa |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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