Datasheet > JANTXV2N7334PBF

JANTXV2N7334PBF

更新时间： 2024-11-26 08:17:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	267K
描述
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAGE-14

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANTXV2N7334PBF 数据手册

PD-90396H

IRFG110

JANTX2N7334

JANTXV2N7334

POWER MOSFET

THRU-HOLE (MO-036AB)

REF:MIL-PRF-19500/597

100V, QUAD N-CHANNEL

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFG110

0.7 Ω

1.0A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as

switching power supplies, motor controls, inverters,

choppers, audio amplifiers, high energy pulse circuits, and

virtually any application where high reliability is required.

The HEXFET transistor’s totally isolated package eliminates

the need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

MO-036AB

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

1.0

0.6

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

4.0

@ T = 25°C

1.4

W/°C

Linear Derating Factor

0.011

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

1.0

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

0.14

5.5

V/ns

dv/dt

-55 to 150

°C

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.63 in./1.6 mm from case for 10s)

1.3 (Typical)

For footnotes refer to the last page

www.irf.com

03/01/10

12 3 4 5 6 7

中文翻译

下载PDF

与JANTXV2N7334PBF相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N7335	INFINEON	获取价格	POWER MOSFET THRU-HOLE (MO-036AB)
JANTXV2N7335	MICROSEMI	获取价格	Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, M
JANTXV2N7336	INFINEON	获取价格	POWER MOSFET THRU-HOLE (MO-036AB)
JANTXV2N7368	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 10A I(C) \| TO-254
JANTXV2N7369	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 10A I(C) \| TO-254
JANTXV2N7370	MICROSEMI	获取价格	NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
JANTXV2N7371	MICROSEMI	获取价格	PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
JANTXV2N7372	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-254AA, Metal,
JANTXV2N7373	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-254AA
JANTXV2N7434	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide

与JANTXV2N7334PBF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXV2N7334PBF

JANTXV2N7334PBF 数据手册

与JANTXV2N7334PBF相关器件

与JANTXV2N7334PBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXV2N7334PBF

JANTXV2N7334PBF 数据手册

与JANTXV2N7334PBF相关器件

与JANTXV2N7334PBF相关文章

您还可以找

您在本页遇到什么问题？