Datasheet > JANTXV2N7227U

JANTXV2N7227U

更新时间： 2023-12-06 20:12:33

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	271K
描述
400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7227U with Hermetic Packaging

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JANTXV2N7227U 数据手册

PD-91551D

IRFN350

JANTX2N7227U

JANTXV2N7227U

POWER MOSFET

SURFACE MOUNT(SMD-1)

REF:MIL-PRF-19500/592

400V, N-CHANNEL

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFN350

0.315 Ω

14A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-

state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-

established advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are well-

suited for applications such as switching power supplies,

motor controls, inverters, choppers, audio amplifiers,

high energy pulse circuits, and virtually any application

where high reliability is required. The HEXFET

transistor’s totally isolated package eliminates the need

for additional isolating material between the device and

the heatsink. This improves thermal efficiency and

reduces drain capacitance.

SMD-1

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Surface Mount

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

9.0

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

150

1.2

W/°C

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

700

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

4.0

-55 to 150

Storage Temperature Range

Pckg. Mounting Surface Temperature

Weight

°C

STG

300 (for 5 sec)

2.6 (Typical)

For footnotes refer to the last page

www.irf.com

12/12/07

12 3 4 5 6 7

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JANTXV2N7227U 替代型号

型号	品牌	替代类型	描述	数据表
IRFM350	INFINEON	完全替代	POWER MOSFET THRU-HOLE (TO-254AA)
JANTXV2N7227	MICROSEMI	类似代替	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592

与JANTXV2N7227U相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N7228	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592
JANTXV2N7228	INFINEON	获取价格	POWER MOSFET THRU-HOLE (TO-254AA)
JANTXV2N72281N6036	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72281N6036A	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72281N6036AE3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72281N6036E3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72281N6072	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72281N6072A	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72281N6072AE3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72281N6072E3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507

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