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JANTXV2N7225D PDF预览

JANTXV2N7225D

更新时间: 2024-11-18 13:09:03
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JANTXV2N7225D 数据手册

 浏览型号JANTXV2N7225D的Datasheet PDF文件第2页浏览型号JANTXV2N7225D的Datasheet PDF文件第3页浏览型号JANTXV2N7225D的Datasheet PDF文件第4页浏览型号JANTXV2N7225D的Datasheet PDF文件第5页浏览型号JANTXV2N7225D的Datasheet PDF文件第6页浏览型号JANTXV2N7225D的Datasheet PDF文件第7页 
PD - 90554E  
IRFM250  
JANTX2N7225  
JANTXV2N7225  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
REF:MIL-PRF-19500/592  
200V, N-CHANNEL  
HEXFET® MOSFETTECHNOLOGY  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFM250  
0.100 Ω  
27.4A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state re-  
sistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advan-  
tages of MOSFETs, such as voltage control, very fast switch-  
ing, ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-254AA  
Features:  
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Dynamic dv/dt Rating  
n Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
27.4  
D
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
17  
110  
D
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
Linear Derating Factor  
1.2  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
27.4  
15.0  
5.0  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
mJ  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3 (Typical)  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
1/9/01  

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