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JANTXV2N7225U PDF预览

JANTXV2N7225U

更新时间: 2024-09-24 20:23:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 889K
描述
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U3, U PKG-3

JANTXV2N7225U 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-276AB
包装说明:CHIP CARRIER, R-XBCC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.17
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):27.4 A最大漏源导通电阻:0.105 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-276AB
JESD-30 代码:R-XBCC-N3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):110 A认证状态:Qualified
参考标准:MIL-19500/592表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANTXV2N7225U 数据手册

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