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JANTXV2N7225

更新时间： 2024-11-17 23:01:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
7页	165K
描述
POWER MOSFET THRU-HOLE (TO-254AA)

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中文翻译

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JANTXV2N7225 数据手册

PD - 90554E

IRFM250

JANTX2N7225

JANTXV2N7225

POWER MOSFET

THRU-HOLE (TO-254AA)

REF:MIL-PRF-19500/592

200V, N-CHANNEL

HEXFET^®MOSFETTECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFM250

0.100 Ω

27.4A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

27.4

= 10V, T = 100°C Continuous Drain Current

110

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

150

W/°C

Linear Derating Factor

1.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

27.4

15.0

5.0

dv/dt

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical)

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

1/9/01

12 3 4 5 6 7

中文翻译

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JANTXV2N7225 替代型号

型号	品牌	替代类型	描述	数据表
IRFM250	INFINEON	完全替代	POWER MOSFET THRU-HOLE (TO-254AA)
IRFM240	INFINEON	类似代替	POWER MOSFET THRU-HOLE (TO-254AA)
2N7219	SEME-LAB	功能相似	N?CHANNEL POWER MOSFET

与JANTXV2N7225相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N72251N6036	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72251N6036A	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72251N6036AE3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72251N6036E3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72251N6072	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72251N6072A	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72251N6072AE3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72251N6072E3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N7225D	INFINEON	获取价格	暂无描述
JANTXV2N7225U	MICROSEMI	获取价格	Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon,

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