型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFN150 | INFINEON |
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POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A) | |
IRFN150PBF | INFINEON |
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Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Me | |
IRFN150SMD | SEME-LAB |
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N-CHANNEL POWER MOSFET | |
IRFN214B | FAIRCHILD |
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250V N-Channel MOSFET | |
IRFN214BTA_FP001 | FAIRCHILD |
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Small Signal Field-Effect Transistor, 0.6A I(D), 250V, 1-Element, N-Channel, Silicon, Meta | |
IRFN240 | INFINEON |
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POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A) | |
IRFN240SMD | SEME-LAB |
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N-CHANNEL POWER MOSFET | |
IRFN250 | INFINEON |
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POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A) | |
IRFN250 | SEME-LAB |
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N–CHANNEL POWER MOSFET | |
IRFN250PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, |